| Ident. | Authors (with country if any) | Title |
|---|
| 000010 |
| The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers |
| 000374 |
| High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers |
| 000654 |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain |
| 000962 |
| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000969 |
| Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures |
| 000A85 |
| Power Conversion Efficiency of Quantum Dot Laser Diodes |
| 000B29 |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000C10 |
| 3.5 W continuous wave operation from quantum dot laser |
| 000C12 |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
